Summary Amplifying Read Disturbance in Modern DRAM Chips arxiv.org
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The text discusses the read-disturb phenomenon in modern DRAM chips, specifically RowPress, and references studies, papers, patents, anonymous reviewers, and a research group related to rowhammer attacks and DDR memory errors.
Slides
Slide Presentation (12 slides)
Key Points
- RowPress is a read-disturb phenomenon in modern DRAM chips that causes bitflips in physically nearby rows.
- RowPress reduces the reliability of data as the aggressor row activation time increases.
- RowPress exacerbates DRAM's vulnerability to read disturbance.
- Single-sided RowPress is more effective than double-sided for inducing bitflips.
- Up to 25 RowPress bitflips in a 64-bit data word cannot be corrected by widely used ECC schemes.
Summaries
36 word summary
This summary explores the read-disturb phenomenon in modern DRAM chips, focusing on RowPress. It references studies, papers, and patents related to rowhammer attacks and DDR memory errors. The anonymous reviewers and research group are also mentioned.
80 word summary
This paper explores the read-disturb phenomenon in modern DRAM chips, specifically focusing on a phenomenon called RowPress. RowPress occurs when a DRAM row is kept open for a long period of time, causing bitflips in physically nearby rows.
This summary discusses the amplification of read disturbance in modern DRAM chips. It includes references to studies, papers, and patents related to the topic, such as rowhammer attacks and DDR memory errors. The summary also mentions the anonymous reviewers and research group
902 word summary
This paper explores the read-disturb phenomenon in modern DRAM chips, specifically focusing on a phenomenon called RowPress. RowPress occurs when a DRAM row is kept open for a long period of time, causing bitflips in physically nearby rows.
The program accesses multiple columns of the aggressor DRAM row, causing RowPress and inducing bitflips. This program could be used for a proof-of-concept RowPress attack. DRAM-based systems need to consider RowPress to maintain memory isolation
The document discusses the amplification of read disturbance in modern DRAM chips. It explains that most DRAM timing parameters define the minimum time intervals between pairs of DRAM commands. The document describes the testing infrastructure used for DDR4 DRAM chips and the
RowPress, a read-disturb phenomenon in DRAM technology, significantly reduces the reliability of data as the aggressor row activation time (tAggON) increases. This reduction in reliability is observed across different die revisions from major DRAM manufacturers.
Fig. 8 displays the fraction of tested rows with at least one RowPress bitflip for different manufacturers and DRAM modules. RowPress worsens as DRAM technology scales down. Takeaway: RowPress exacerbates DRAM's vulnerability to read
The overlap between RowPress-vulnerable cells and RowHammer vulnerable cells decreases as t AggON increases. RowPress and RowHammer bitflips have opposite directions. The minimum t AggON significantly decreases as increases. In extreme cases,
M's 16Gb B-Die and F-Die chips have a 75% bitflip fraction at t AggON. Mfr. M's 16Gb E-Die chips show the opposite trend. RowPress reduces as temperature increases
The slopes of the overlapping trend lines in Fig. 17 for t AggON ? 7.8 ?s of Mfr. S, H, M are ?1.015, ?1.010, and ?1.011,
Single-sided RowPress is more effective than double-sided for certain die revisions, requiring fewer aggressor row activations to induce bitflips. Single-sided RowPress becomes even more effective as temperature increases. The effectiveness of different data patterns in inducing bitflips
The document discusses the phenomenon of read disturbance in modern DRAM chips, specifically focusing on the RowPress phenomenon. The authors conducted experiments to understand the impact of different data patterns, access patterns, and temperature on read disturbance. They observed that increasing tAg
RowPress, a user-level program, can induce bitflips in DRAM chips that RowHammer cannot, and it induces a higher number of bitflips compared to RowHammer. The program accesses multiple cache blocks in aggressor rows to
Up to 25 RowPress bitflips in a 64-bit data word cannot be corrected by widely used ECC schemes. A significant fraction of 64-bit data words exhibit at least three RowPress bitflips, making them costly. Accessing
RowPress is a widespread read-disturb phenomenon in modern DRAM chips that amplifies vulnerability to bitflips. It has a different mechanism from RowHammer and reduces the number of activations needed to induce a bitflip by one to two orders of
The summary includes a list of references cited in the document.
The excerpt includes references to various research papers and patents related to the topic of amplifying read disturbance in modern DRAM chips. These sources discuss different aspects of the problem, such as remote software-induced fault attacks, error detecting and error correcting codes, low
This summary discusses the amplification of read disturbance in modern DRAM chips. The paper references several sources that discuss the topic, including studies on rowhammer attacks and DDR memory errors. It also acknowledges the anonymous reviewers and research group members for their feedback,
The summary provided is not a coherent text and appears to be a list of references. Therefore, it is not possible to rewrite it into a more concise version while preserving important details and highlighting key points.
This excerpt includes a list of references to various research papers and articles related to memory performance attacks, specifically focusing on the RowHammer problem. The papers discuss topics such as denial of memory service in multi-core systems, memory density issues, memory access scheduling
This text excerpt includes a list of references related to the topic of amplifying read disturbance in modern DRAM chips. It includes citations to various studies, papers, and patents that discuss different aspects of this issue, such as active-precharge hammering,
This excerpt is a list of references cited in the document, "Amplifying Read Disturbance in Modern DRAM Chips." It includes various sources related to DRAM circuit design, row hammer attacks, error mitigation techniques, data-dependent failures in DR
This summary contains a list of references and citations from various sources related to the topic of amplifying read disturbance in modern DRAM chips. The list includes studies, papers, and repositories that discuss different aspects of the issue, such as write disturb analyses,
The summary contains a list of references to various research papers and resources related to DRAM chips, memory systems, performance evaluation, and security vulnerabilities.
Several studies have been conducted on mitigating the effects of Rowhammer attacks on DRAM chips. These studies include practical mitigation techniques on ARM systems, exploring the physics of DRAM Rowhammer vulnerabilities, efficient Rowhammer attacks on FPGA-CPU platforms, preventing
The excerpt provides a list of references related to the topic of amplifying read disturbance in modern DRAM chips. It also includes information about an artifact that contains data, source code, and scripts for reproducing the results mentioned in the paper. The artifact
The excerpt discusses the characterization, mitigation, and evaluation of RowPress, a vulnerability in modern DRAM chips. It provides details on the experiment customization and the source code used for the characterization program. The text also mentions the evaluation of different configurations using Ram